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CMBTA13
NPN Small-Signal Darlington Transistors
Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3
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Unit: inch (mm)
Absolute Maximum Ratings Collector-emmitter voltage (open base) VBE = 0 Collector current (d.c.) Total power dissipation up to Tamb = 25oC Junction Temperature D.C. current gain IC = 10mA; VCE = 5V Transition frequency at f = 100MHZ IC = 10mA; VCE = 5V
Symbol VCES IC Ptot Tj hFE fT
Value max 30 max 300 max 250 max 150 min 5000 min 125
UNIT V mA mW
o
C
MHZ
Ratings (at TA = 25oC unless otherwise specified) Limmiting values Symbol Collector-base voltage (open emitter) VCBO VBE = 0 Collector-emitter voltage (open base) VCES VBE = 0 Collector-base voltage (open collector) Collector current Total power dissipation up to Tamb = 25oC Storge Temperature Junction Temperature Thermal Resistance from junction to Ambient VEBO IC Ptot Tstg Tj RthA
Value max 30 max 30 max 10 max 300 max 250 -65 to +150 max 150 500
UNIT V V V mA mW
o o
C C
K/mW
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CMBTA13
Characteristics (at Ta=25 oC unless otherwise specified) Symbol Value Collector-emitter breakdown voltage V(BR)CES min 30 IC = 100 uA Emitter-base cut-off current IEBO max 0.1 VBE = 10 V Emitter-base cut-off current ICBO max 0.1 VCB = 10 V D.C. current gain IC = 10mA; VCE = 5V hFE min 5000 min 10000 IC = 100mA; VCE = 5V Collector-emitter saturation voltage VCEsat max 1.5 IC = 100mA; IB = 0.1 mA Base-emitter On voltage VBE(on) max 2 IC = 100mA; VCE = 5V Transition frequency at f = 100 MHZ fT min 125 IC = 10mA; VCE = 5V
UNIT V uA uA
V V MHZ
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